Design of 1.2 kV SiC Trench MOSFET for suppression on Electric Field Crowding at Gate Oxide

被引：0
作者：
Park Y. [2 ]
Kim C. [2 ]
Yoon H. [2 ]
Kang G. [2 ]
Kim G. [2 ]
Seok O. [1 ]
机构：
[1] School of Electronic Engineering, Kumoh National Institute of Technology
[2] Department of Electronic Engineering, Kumoh National Institute of Technology
来源：
Transactions of the Korean Institute of Electrical Engineers | 2022年 / 71卷 / 11期
关键词：
Electric field crowding; P-base; P-shielding; SiC; Trench MOSFET;
D O I：
10.5370/KIEE.2022.71.11.1646
中图分类号：
学科分类号：
摘要：
SiC trench Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) has an advantage of a low on-resistance due to a small cell pitch between unit cells, and is widely used for power electronics requiring a high power conversion efficiency. However, there is a electric-field crowding problem at the gate oxide. Since the physical destruction of the gate oxide is irrecoverable, researches of a design that can improve the reliability of the trench MOSFET by suppressing the electric field of the gate oxide are needed. This paper implemented a structure in which p-shielding is added next to a trench and verified its electrical characteristics of 1.2 kV SiC trench MOSFET using Sentaurus TCAD simulation. The result showed that the specific on-resistance of 2.02 mΩ-cm2 was measured and the breakdown voltage was improved from 850 V to 1717 V. Copyright © The Korean Institute of Electrical Engineers.
引用
收藏
页码：1646 / 1650
页数：4
相关论文
共 22 条
[1]  
Zhao T., Wang J., Huang A. Q., Comparisons of SiC MOSFET and Si IGBT Based Motor Drive Systems, IEEE Industry Applications Annual Meeting, pp. 331-335, (2007)
[2]  
Nakamura T., Aketa M., Nakano Y., Sasagawa M., Otsuka T., Novel Developments Towards Increased SiC Power Device and Module Efficiency, IEEE Energytech, 32, 11, pp. 1-6, (2012)
[3]  
Nakamura T., Nakano Y., Aketa M., Nakamura R., Mitani S., Sakairi H., Yokotsuji Y., High Performance SiC Trench Devices with Ultra-low Ron, IEEE International Electron Devices Meeting, 11, 2, pp. 1-2653, (2011)
[4]  
Chowdhury C., Stum Z., Li Z., Ueno K., Chow T. P., Comparison of 600 V Si, SiC and GaN power devices, Materials Science Forum, 778-780, pp. 971-974, (2014)
[5]  
Heer D., Domes D., Peters D., Switching performance of a 1200 V SiC-Trench-MOSFET in a low-power module, IEEE Transactions on Power Electronics, 35, 8, pp. 8512-8523, (2020)
[6]  
Li Z., Wang J., Ji B., Shen Z. J., Power Loss Model and Device Sizing Optimization of Si/SiC Hybrid Switches, IEEE Transactions on Power Electronics, 35, 8, pp. 8512-8523, (2020)
[7]  
Wu L., Qin J., Saeedifard M., Wasynczuk O., Shenai K., Efficiency Evaluation of the Modular Multilevel Converter Based on Si and SiC Switching Devices for Medium/High-Voltage Applications, IEEE Transactions on Power Electronics, 62, 2, pp. 286-293, (2015)
[8]  
Kyoung S., Hong Y., Lee M., Nam T., Designing 4H-SiC P-shielding trench gate MOSFET to optimize on-off electrical characteristics, Solid State Electronics, 140, pp. 23-28, (2018)
[9]  
Chen L., Guy O. J., Jennings M. R., Igic P., Wilks S. P., Mawb P. A., Study of 4H-SiC trench MOSFET structures, Solid State Electronics, 49, 7, pp. 1081-1085, (2005)
[10]  
Luo X., Liao T., Wei J., Fang J., Yang F., Zhang B., A novel 4H-SiC trench MOSFET with double shielding structures and ultralow gate-drain charge, Journal of Semiconductors, 40, 5, (2019)
123