Numerical analysis of the effect of heat shield structure on growth of large diameter monocrystalline silicon

During the process of growth 300 nm monocrystalline Silicon, the effect of heat shield on the furnace body tmperature, flow shield and the thermal load in crystal were calculated by finite element method. The present numerical model incorporates the most important physical phenomena of the Cz growth process including latent heat generation during crystallization, crystal-melt interface deflection, turbulent heat and mass transport, oxygen transport, etc. The result demonstrates that using steep heat shield can flat the crystal-melt interface, and reduce the Von Mises stress without increase of macro-dislocation probability, and reduce the oxygen concentration in melt.