Influence of hydrogen annealing temperature on the optical and electrical properties of ZnO thin films prepared by magnetron sputtering

被引：0

作者：

Ma, Ming ^{[1
]}

Gao, Chuan-Yu ^{[1
]}

Zhou, Ming ^{[2
,3
]}

Li, Bao-Jia ^{[2
,3
]}

Li, Hao-Hua ^{[2
,3
]}

机构：

[1] Department of Mechanical Engineering, Jiangsu University

[2] Department of Material Science and Engineering, Jiangsu University

[3] Key Laboratory of Center for Photo Manufacture Science and Technology of Jiangsu Province

来源：

Gongneng Cailiao/Journal of Functional Materials | 2013年 / 44卷 / 15期

关键词：

Annealing temperature; Sheet resistance; Transmittance; ZnO thin films;

D O I：

10.3969/j.issn.1001-9731.2013.15.030

中图分类号：

学科分类号：

摘要：

In this paper, ZnO thin films were prepared on glass slide substrates using DC magnetron sputtering method at room temperature. The samples were annealed atmospheric pressure of hydrogen gas under different temperatures. The results indicated that the sample obtained under 500°C had optimum optical and electrical performance. Its whole average transmittance in the wavelength range of 360-960 nm was 76.35%, and the sheet resistance was 6.3 kΩ/□.

引用

页码：2268 / 2270+2275

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