Actuation properties of lead zirconate titanate thick films structured on Si membrane by the aerosol deposition method

被引:0
作者
Lebedev, Maxim [1 ,3 ]
Akedo, Jun [1 ]
Akiyama, Yoshikazu [2 ]
机构
[1] Mechanical Engineering Laboratory, A.I.S.T., M.I.T.I., Tsukuba, Ibaraki 305-8564
[2] R and D Center, RICOH Co., Ltd., Tsuzuki, Yokohama 224-0035
[3] JST Cooperative Researcher, Kawaguchi, Saitama 332-0012
来源
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2000年 / 39卷 / 9 B期
关键词
Deposition - Interferometers - Laser applications - Lead compounds - Microactuators - Natural frequencies - Semiconducting silicon - Substrates - Thick films;
D O I
10.1143/jjap.39.5600
中图分类号
学科分类号
摘要
The results of the direct deposition of lead zirconate titanate [Pb(Zr0.52, Ti0.48)O3] (PZT) thick film on a Si-based structure are presented. The construction of a bottom electrode is very important for successful deposition. The actuation properties of PZT on the Si membrane were investigated. For a 6.2 × 6.1 mm2, 65-μm-thick Si membrane driven by a 4.7 × 4.3 mm2, 13-μm-thick PZT layer, the deflections, which were 1.5 μm upon applying 52 V at nonresonance frequency and 22 μm upon applying 8 V at resonance frequency, were measured.
引用
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页码:5600 / 5603
页数:3
相关论文
共 18 条
  • [1] Akedo J., Oyo Buturi, 68, (1999)
  • [2] Chen H.D., Udayakumar K.R., Gaskey C.J., Cross L.E., Bernstein J.J., Niles L.C., J. Am. Ceram. Soc., 79, (1996)
  • [3] Watanahe S., Fujii T., Appl. Phys. Lett., 66, (1995)
  • [4] Ohba Y., Miyauchi M., Tsurumi T., Daimon M., Jpn. J. Appl. Phys., 32, (1993)
  • [5] Poor M.R., Fledderman C.B., J. Appl. Phys., 70, (1991)
  • [6] Chung C.W., J. Vac. Sci. & Technol. B, 16, (1998)
  • [7] Saito K., Choi J.H., Fukuda T., Ohue M., Jpn. J. Appl. Phys., 31, (1992)
  • [8] Chen H.D., Udayakumar K.R., Cross L.E., Bernstein J.J., Niles L.C., J. Appl. Phys., 77, (1995)
  • [9] Akiyama Y., Yamanaka K., Fujisawa E., Kowata Y., Jpn. J. Appl. Phys., 38, (1999)
  • [10] Kasyu S., Fuchita E., Manabe T., Hayashi C., Jpn. J. Appl. Phys., 23, (1984)