Current-voltage characteristics of n-SiOxNy/n-Si heterojunction diode grown on silicon

被引：0
作者：
Xu, Mingzhen [1 ]
Tan, Changhua [1 ]
机构：
[1] Institute of Microelectronics, Peking University, Beijing 100871, China
来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 2007年 / 28卷 / SUPPL.期
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D O I：
暂无
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学科分类号：
摘要：
17
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页码：369 / 371
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