4H- and 6H-SiC Rutherford back scattering-channeling spectrometry: polytype finger printing

被引：0
|
作者：
Nipoti, R. [1 ]
Carnera, A. [2 ]
机构：
[1] CNR-Istituto LAMEL, via Gobetti 101, IT-40129 Bologna, Italy
[2] Dipartimento di Fisica and INFM, Univ. degli Studi di Padova, via Marzolo 8, IT-35131 Padova, Italy
来源：
Materials Science Forum | 2001年 / 353-356卷
关键词：
D O I：
10.4028/www.scientific.net/msf.353-356.279
中图分类号：
学科分类号：
摘要：
10
引用
收藏
页码：279 / 282
相关论文
共 50 条
  • [1] 4H-and 6H-SiC Rutherford back scattering-channeling spectrometry: polytype finger printing
    Nipoti, R
    Carnera, A
    SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000, 2001, 353-356 : 279 - 282
  • [2] Rutherford backscattering spectrometry channeling study of ion-irradiated 6H-SiC
    Jiang, W
    Weber, WJ
    Thevuthasan, S
    McCready, DE
    SURFACE AND INTERFACE ANALYSIS, 1999, 27 (04) : 179 - 184
  • [3] Shallow acceptor levels in 4H- and 6H-SiC
    Smith, SR
    Evwaraye, AO
    Mitchel, WC
    Capano, MA
    JOURNAL OF ELECTRONIC MATERIALS, 1999, 28 (03) : 190 - 195
  • [4] Shallow acceptor levels in 4H- and 6H-SiC
    S. R. Smith
    A. O. Evwaraye
    W. C. Mitchel
    M. A. Capano
    Journal of Electronic Materials, 1999, 28 : 190 - 195
  • [5] Sublimation growth of 4H- and 6H-SiC boule crystals
    Heydemann, VD
    Schulze, N
    Barrett, DL
    Pensl, G
    DIAMOND AND RELATED MATERIALS, 1997, 6 (10) : 1262 - 1265
  • [6] Electrical characterization of the gallium acceptor in 4H- and 6H-SiC
    Troffer, T.
    Pensl, G.
    Schoner, A.
    Henry, A.
    Hallin, C.
    Kordina, O.
    Janzen, E.
    Materials Science Forum, 1998, 264-268 (pt 1): : 557 - 560
  • [7] Silicate monolayers on the hexagonal surfaces of 4H- and 6H-SiC
    Bernhardt, J.
    Schardt, J.
    Starke, U.
    Heinz, K.
    Materials Science Forum, 2000, 338
  • [8] Electrical characterization of the gallium acceptor in 4H- and 6H-SiC
    Troffer, T
    Pensl, G
    Schoner, A
    Henry, A
    Hallin, C
    Kordina, O
    Janzen, E
    SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 557 - 560
  • [9] Defects in differently annealed oxides on 4H- and 6H-SiC
    vonKamienski, ES
    Portheine, F
    Golz, A
    Kurz, H
    SILICON CARBIDE AND RELATED MATERIALS 1995, 1996, 142 : 641 - 644
  • [10] Calculated density of states and carrier concentration in 4H- and 6H-SiC
    Persson, C.
    Lindefelt, U.
    Materials Science Forum, 1998, 264-268 (pt 1): : 275 - 278
12345