Simulation analysis of anisotropy of electron transport in silicon

被引：0
作者：
Osada, Yoshihiro [1 ]
机构：
[1] Nara National College of Technology, 22, Yata-cho, Yamatokoriyama Nara
来源：
Osada, Yoshihiro | 1760年 / Institute of Electrical Engineers of Japan卷 / 134期
关键词：
Anisotropy; Drift velocity; Monte Carlo simulation; Silicon;
D O I：
10.1541/ieejeiss.134.1760
中图分类号：
学科分类号：
摘要：
Electron transport in silicon is analyzed using Ensemble Monte Carlo simulation based on analytic band model. For <001>, larger valley occupation in X valleys on the kz-axis with smaller drift velocity leads to stronger anisotropy of total electron drift velocity. Generalizing from this result, larger valley occupation in X valleys with smaller drift velocity leads to stronger anisotropy of total electron drift velocity. This phenomenon is due to the anisotropy of electron effective masses in X valley. © 2014 The Institute of Electrical Engineers of Japan.
引用
收藏
页码：1760 / 1761
页数：1
相关论文
共 3 条
  • [1] Osada Y., Electron transport simulation in silicon based on analytic band model, IEEJ Trans. EIS, 131, 2, pp. 480-481, (2011)
  • [2] Osada Y., Anisotropy of drift velocity in electron transport simulation in silicon, IEEJ Trans. EIS, 132, 11, pp. 1880-1881, (2012)
  • [3] Canali C., Jacoboni C., Nava F., Ottaviani G., Alberigi-Quaranta A., Electron drift velocity in silicon, Phys. Rev. B, 12, 4, pp. 2265-2284, (1975)
1