The low resistive and transparent Al-doped SnO2 films: P-type conductivity, nanostructures and photoluminescence

被引：75

作者：

Benouis, C.E. ^{[1
]}

Benhaliliba, M. ^{[1
]}

Mouffak, Z. ^{[2
]}

Avila-Garcia, A. ^{[3
]}

Tiburcio-Silver, A. ^{[4
]}

Ortega Lopez, M. ^{[5
]}

Romano Trujillo, R. ^{[5
]}

Ocak, Y.S. ^{[6
]}

机构：

[1] Department of Material Technology, Physics Faculty, USTOMB University, BP1505 Oran, Algeria

[2] Department of Electrical, Computer Engineering California State University, Fresno, CA, United States

[3] Cinvestav-IPN, Dept. Ingeniería Eléctrica, SEES, Apdo. Postal 14-740, 07000 México, D.F., Mexico

[4] ITT, DIE, Apdo. Postal 20, Metepec 3, 52176 Estado de Mexico, Mexico

[5] Centro de Investigación en Dispositivos Semiconductores, Instituto de Ciencias-BUAP, 14 Sur y Av., San Claudio, C.U. Puebla, Pue, Mexico

[6] Dicle University, Education Faculty, Science Department, 21280 Diyarbakir, Turkey

来源：

Journal of Alloys and Compounds | 2014年 / 603卷

关键词：

Aluminum compounds - Spray pyrolysis - Tin oxides - Crystal structure - Glass substrates - Energy gap - Optical band gaps - Photoluminescence - Aluminum coatings - ITO glass - Nanostructures;

D O I：

10.1016/j.jallcom.2014.03.046

中图分类号：

学科分类号：

摘要：

In this work, we study the crystalline structure, surface morphology, transmittance, optical bandgap and n/p type inversion of tin oxide (SnO 2). The Nanostructured films of Al-doped SnO2 were successfully produced onto ITO-coated glass substrates via the spray pyrolysis method at a deposition temperature of 300 °C. A (1 0 1) and (2 1 1)-oriented tetragonal crystal structure was confirmed by X-ray patterns; and grain sizes varied within the range 8-42 nm. The films were polycrystalline, showing a high transparency in the visible (VIS) and infrared (IR) spectra. The optical bandgap was estimated to be around 3.4 eV. The atomic force microscopy (AFM) analysis showed the nanostructures consisting of nanotips, nanopatches, nanopits and nanobubbles. The samples exhibited high conductivity that ranged from 0.55 to 104 (S/cm) at ambient and showed an inversion from n to p-type as well as a degenerate semiconductor characters with a bulk concentration reaching 1.7 x 1019 cm-3. The photoluminescence measurements reveal the detection of violet, green and yellow emissions. © 2014 Elsevier B.V. All rights reserved.

引用

页码：213 / 223