Research progress and prospects of plastic thermoelectric materials

被引:0
|
作者
Xu, Bo [1 ]
Tian, Yong-Jun [1 ]
机构
[1] Yanshan Univ, State Key Lab Metastable Mat Sci & Technol, Qinhuangdao 066004, Peoples R China
关键词
plastic thermoelectric materials; flexible thermoelectric devices; Ag2S; Mg3Bi2; FLEXIBLE THERMOELECTRICS; SEMICONDUCTOR; PERFORMANCE;
D O I
10.7498/aps.73.20241129
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
In recent years, significant progress has been made in the research of plastic thermoelectric materials, for example, Ag2S-based alloys. These materials exhibit excellent room-temperature plasticity due to their low slipping barrier energy and high cleavage energy, with synergistic enhancements in plasticity and thermoelectric properties achievable through alloying and doping strategies. The latest study on Mg3Bi2-based single crystals demonstrated superior performance in terms of plastic deformation capability and room-temperature thermoelectric properties. Microstructural characterization and theoretical calculation have revealed the crucial role of dislocation glide in the plastic deformation process of Mg3Bi2 single crystals, especially, the low slipping barrier energy observed in multiple slip systems. Importantly, the Te-doped single-crystalline Mg3Bi2 shows a power factor of similar to 55 mu W cm(-1) K (-2) and ZT of similar to 0.65 at room temperature along the ab plane, which exceed those of the existing ductile thermoelectric materials. These findings not only deepen the understanding of microscopic deformation mechanisms in plastic thermoelectric materials but also establish an important foundation for optimizing material properties and developing novel flexible thermoelectric devices. Future applications of these materials in practical devices still face challenges in thermal stability, chemical stability, and interfacial contact. Addressing these issues will promote the application of plastic thermoelectric materials in the field of flexible electronics.
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页数:6
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