Deformation induced holes in Ge-rich SiGe-on-insulator and Ge-on-insulator substrates fabricated by Ge condensation process

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作者：
MIRAI-Association of Super-Advanced Electronics Technology , 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan [1 ]
不详 [2 ]
不详 [3 ]
不详 [4 ]
不详 [5 ]
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来源：
Applied Physics Express | 2008年 / 1卷 / 10期
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摘要：
Fabrication - Conductive films
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页码：101401 / 101401
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