Characterization of sub-100 nm MOSFETs with high K gate dielectric

被引：0

作者：

Zhu, Hui-Wen ^{[1
]}

Liu, Xiao-Yan ^{[1
]}

Shen, Chao ^{[1
]}

Kang, Jin-Feng ^{[1
]}

Han, Ru-Qi ^{[1
]}

机构：

[1] Inst. of Microelectron., Peking Univ., Beijing 100871, China

来源：

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 2001年 / 22卷 / 09期

关键词：

Gate dielectrics - Short channel performance;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

(Edited Abstract)

引用

页码：1107 / 1111

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