Characterization of sub-100 nm MOSFETs with high K gate dielectric

被引：0
|
作者：
Zhu, Hui-Wen [1 ]
Liu, Xiao-Yan [1 ]
Shen, Chao [1 ]
Kang, Jin-Feng [1 ]
Han, Ru-Qi [1 ]
机构：
[1] Inst. of Microelectron., Peking Univ., Beijing 100871, China
来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 2001年 / 22卷 / 09期
关键词：
Gate dielectrics - Short channel performance;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
(Edited Abstract)
引用
收藏
页码：1107 / 1111
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