Radiation defects in lithium-doped silicon grown by the Czochralski technique

被引:0
|
作者
Bogatov, N.M. [1 ]
机构
[1] Kuban' State Univ, Krasnodar, Russia
来源
Surface Investigation X-Ray, Synchrotron and Neutron Techniques | 2000年 / 15卷 / 08期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:1247 / 1253
相关论文
共 50 条
  • [21] ELECTRON IRRADIATION OF LITHIUM-DOPED SILICON AT LOW TEMPERATURES
    STANNARD, JE
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1969, 14 (03): : 326 - &
  • [22] Formation process of grown-in defects in Czochralski grown silicon crystals
    Nakamura, K
    Saishoji, T
    Kubota, T
    Iida, T
    Shimanuki, Y
    Kotooka, T
    Tomioka, J
    JOURNAL OF CRYSTAL GROWTH, 1997, 180 (01) : 61 - 72
  • [23] Formation process of grown-in defects in Czochralski grown silicon crystals
    Komatsu Electronic Metals Co Ltd, Kanagawa, Japan
    J Cryst Growth, 1 (61-72):
  • [24] Microvoid defects in nitrogen- and/or carbon-doped Czochralski-grown silicon crystals
    Nakai, K., 1600, Japan Society of Applied Physics (42):
  • [25] Secondary defects of as-grown oxygen precipitates in nitrogen doped Czochralski single crystal silicon
    Tuo, Huan
    Liu, Yun
    Li, Minghao
    Dai, Rongwang
    Wang, Hao
    Yu, Yuehui
    Xue, Zhongying
    Wei, Xing
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2023, 163
  • [26] Microvoid defects in nitrogen- and/or carbon-doped Czochralski-grown silicon crystals
    Takahashi, J
    Nakai, K
    Kawakami, K
    Inoue, Y
    Yokota, H
    Tachikawa, A
    Ikari, A
    Ohashi, W
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2003, 42 (2A): : 363 - 370
  • [27] Behavior of defects in heavily boron doped Czochralski silicon
    Ono, T
    Asayama, E
    Horie, H
    Hourai, M
    Sano, M
    Tsuya, R
    Nakai, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1997, 36 (3A): : L249 - L252
  • [28] OXYGEN PRECIPITATION AND DEFECTS IN HEAVILY DOPED CZOCHRALSKI SILICON
    WIJARANAKULA, W
    JOURNAL OF APPLIED PHYSICS, 1992, 72 (07) : 2713 - 2723
  • [29] Behavior of defects in heavily boron doped Czochralski silicon
    Sumitomo Sitix Corp, Saga, Japan
    Jpn J Appl Phys Part 2 Letter, 3 A (L249-L252):
  • [30] THE ELIMINATION OF DEFECTS IN CZOCHRALSKI-GROWN LITHIUM-NIOBATE
    SUZUKI, T
    JOURNAL OF MATERIALS SCIENCE, 1995, 30 (11) : 2873 - 2876