Effect of precursor to the physical properties of co-electrodeposited Cu2ZnSnS4 thin films

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Tianjin Key Laboratory of Electronic Materials and Devices, School of Electronics and Information Engineering, Hebei University of Technology, 5340 Xiping Road, Beichen District, Tianjin [1 ]
300401, China
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J. Optoelectron. Adv. Mat. | / 11-12卷 / 793-799期
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摘要：
The Cu2ZnSnS4 (CZTS) thin films is a new type of materials with a band gap of 1.4-1.6 eV, just as the same as the best band gap for solar cells (l.5eV). The co-electrodeposition is a one-step method for the preparation of Cu2ZnSnS4 thin films on ITO substrate. Through the simple and effective co-electrodeposition method, the structural, morphological, compositional and optical properties of Cu2ZnSnS4 thin films can be regulated through adjusting the Cu, Zn, Sn and S component in the precursor solution. Structure and morphological characteristics of the Cu2ZnSnS4 thin films were studied by XRD diffraction analysis, Raman analysis, EDS and SEM analysis respectively. The photoelectric response analysis also were performed to comprehensive evaluate the quality of the thin films.
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