A low-power SiGe tunable synchronous oscillator for UMTS downlink

被引：0

作者：

Bégueret, Jean-Baptiste ^{[1
]}

Taris, Thierry ^{[1
]}

Lapuyade, Herve ^{[1
]}

Deval, Yann ^{[1
]}

机构：

[1] IXL Laboratory, University of Bordeaux, Bordeaux, France

来源：

IEICE Transactions on Electronics | 2003年 / E86-C卷 / 08期

关键词：

CMOS integrated circuits - Frequency synthesizers - Integrated circuit manufacture - Mobile telecommunication systems - Semiconducting silicon compounds - Spurious signal noise - Synchronization - Telecommunication links - Tuning;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

An ultra-low power 4.3 GHz Synchronous Oscillator (SO) is presented, integrated in a 0.25 μm BiCMOS SiGe technology, to act as the RF loop of an UMTS double-loop synthesizer. This SO is tunable in order to counteract technology discrepancies. Hence, the synchronization range is smaller, reducing unwanted synchronization and improving the frequency generation accuracy. This 1.8V SO provides a -115 dBc/Hz phase noise at 100 kHz offset, consuming only 3.6 mW.

引用

页码：1422 / 1426