Influence of doping density on the short-channel-effect immunity in the deep-sub-micron grooved gate PMOSFET

Based on the hydrodynamic energy transport model, the short-channel-effect immunity in the deep-submicron grooved gate PMOSFET is studied together with the influences of substrate and channel doping density on that effect immunity. At the same time, the results are compared with those from corresponding conventional planar devices and it is manifested that the short-channel-effect can be depressed deeply for grooved gate devices in the deep-submicron and super-deep-sub-micron region, and with the increase of substrate and channel doping density, the threshold voltage rises and short-channel-effect is diminished. But the variation of the threshold voltage in grooved gate devices is smaller than that in planar devices. Finally, the results are explained based on the interior physics mechanism in devices.