Bipolar structure in thermally treated Czochralski silicon wafer

被引：0
|
作者：
Yu, Xuegong [1 ]
Yang, Deren [1 ]
Ma, Xiangyang [1 ]
Fan, Ruixin [1 ]
Que, Duanlin [1 ]
机构：
[1] Yu, Xuegong
[2] Yang, Deren
[3] Ma, Xiangyang
[4] Fan, Ruixin
[5] Que, Duanlin
来源：
Yu, X. (mseyang@dial.zju.edu.cn) | 1600年 / Japan Society of Applied Physics卷 / 42期
关键词：
Annealing - Carrier concentration - Ozone - Precipitation (chemical);
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摘要：
The carrier concentration profiles in p-type Czochralski (CZ) silicon (Si) wafers respectively subjected to one-step high temperature and three-step high-low-high annealing followed by a prolonged 450°C annealing have been investigated by spreading resistance profile (SRP). It is found that the carrier concentration profile in the p-type CZ Si wafer subjected to three-step annealing is characteristic of a PNP bipolar structure, while, that in the wafer subjected to one-step annealing is just characteristic of a PN junction. It is suggested that the formation of the PNP bipolar structure is due to the denuded zone formation and bulk oxygen precipitation.
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页码：1129 / 1132
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