Top antireflective coating process for 193 nm lithography

被引：0

作者：

Takano, Yusuke ^{[1
]}

Ijima, Kazuyo ^{[1
]}

Akiyama, Yasushi ^{[2
]}

Tanaka, Hatsuyuki ^{[2
]}

Chen, Harrison ^{[2
]}

Ho, Bang-Chein ^{[1
]}

机构：

[1] AZ Electronic Materials, 3810, Chihama, Daito-cho, Ogasa-gun, Shizuoka Pref. 437-1496, Japan

[2] Taiwan Semiconductor Manufacturing Company, Ltd., 9, Creation Rd. 1, Hsin-Chu 300, Taiwan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2002年 / 41卷 / 6 B期

关键词：

Antireflection coatings - Computer simulation - Contamination - Etching - Refractive index;

D O I：

10.1143/jjap.41.4051

中图分类号：

学科分类号：

摘要：

In the emerging 193 nm lithography, substantial process margin control will be demanded, so that process requirements for improved critical dimension (CD) uniformity will include minimizing the reflectivity swing amplitude of a resist on the bottom antireflective coating (BARC). Although swing amplitude could be suppressed by BARC to some extent, a simulation clarified that swing amplitude could be further suppressed by a top antireflective coating (TARC). In this study we will evaluate the potential improvements with the addition of an aqueous TARC to the 193 nm process. Recently, a material, AZ AQUATAR-VI, has been formulated with the chemical matching, refractive index and coating thickness optimized for the process. Logic IC with 0.13 μm design rules will be the primary test target, concentrating on gate levels. In addition to the optical benefit, it was also found that the TARC layer could work as a protective layer against environmental contamination.

引用

页码：4051 / 4054