Electrical properties of p- and n-GaSe doped with As and Ge

被引：0

作者：

Shigetomi, Shigeru ^{[1
]}

Ikari, Tetsuo ^{[2
]}

Nakashima, Hiroshi ^{[3
]}

机构：

[1] Department of Physics, Kurume University, 67 Asahi-machi, Kurume, Fukuoka 830-0011, Japan

[2] Department of Electronics, Miyazaki University, 1-1 Gakuenkibanadai, Miyazaki 889-2155, Japan

[3] Adv. Sci. Technol. Ctr. Coop. Res., Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-0811, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2000年 / 39卷 / 9 A期

关键词：

Arsenic - Charge carriers - Electric properties - Hall effect - Impurities - Semiconducting germanium - Semiconducting selenium - Semiconductor doping;

D O I：

10.1143/jjap.39.5083

中图分类号：

学科分类号：

摘要：

Hall effect measurements are carried out to study the carrier transport of GaSe doped with amphoteric impurities. The p-and n-type conductions were obtained for the As- and Ge-doped samples, respectively. The carrier transports in the As- and Ge-doped samples are associated with the deep acceptor level at 0.54 eV above the valence band and the deep donor level at 0.58 eV below the conduction band, respectively.

引用

页码：5083 / 5084