Study on boron-doped SiGe/Si heterostructure

被引：0

作者：

Ma, Tongda ^{[1
]}

Tu, Hailing ^{[1
]}

Shao, Beiling ^{[1
]}

Chen, Changchun ^{[2
]}

Huang, Wentao ^{[2
]}

机构：

[1] Gen. Res. Inst. for Nonferrous Metal, Beijing 100088, China

[2] Inst. of Microelectronics, Tsinghua Univ., Beijing 100084, China

来源：

Rare Metals | 2003年 / 22卷 / SUPPL.期

关键词：

Boron - Crystal defects - Semiconducting germanium compounds - Semiconducting silicon compounds - Semiconductor doping;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

SiGe/Si heterostructure is characterized using HREM, synchrotron radiation X-ray topography, and secondary ion mass spectrometry (SIMS). Many defects distribute in the SiGe layer, but few and even no defects are found else layers. The mechanism of defects is discussed. The doped boron (B) atoms in SiGe layer are favored of replacing germanium atoms in (111) plane. The misfit stress between SiGe layer and Si buffer layer are relaxed by boron doping and lattice deformation related to the doping.

引用

页码：49 / 52

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