Igbts for three-level inverters can meet energy-efficient design needs

被引：0
|
作者：
Lella, Marco Di [1 ]
Riccardo, Ramin [1 ]
机构：
[1] Semikron, Pomezia, Roma, Italy
来源：
Power Electronics Technology | 2009年 / 35卷 / 07期
关键词：
Compendex;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Insulated gate bipolar transistors (IGBT)
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页码：24 / 27
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