Study on photothermal intensity-modulation characteristics of laser-diode

被引：0

作者：

Lu, H.B. ^{[1
]}

Wang, X.Z. ^{[1
]}

Wang, X.F. ^{[1
]}

Qian, F. ^{[1
]}

Song, S. ^{[1
]}

Chen, G.T. ^{[1
]}

Fang, Z.J. ^{[1
]}

机构：

[1] Shanghai Inst. of Optics, Chinese Acad. of Sci., Shanghai 201800, China

来源：

Zhongguo Jiguang/Chinese Journal of Lasers | 2000年 / 27卷 / 11期

关键词：

Electric currents - Frequency modulation - Interferometers - Semiconductor lasers;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Based on the physical model of a laser diode (LD) modulated by photothermal effect, the relations of the photothermal intensity-modulation depth of the LD with the modulation frequency and injection current are theoretically deduced and experimentally verified. It is useful for determining appropriate modulation frequency and injection current in LD interferometer with a photothermal modulation to reduce the influence of light- intensity modulation, which realizes nanometer-accuracy interferometer measurement.

引用

页码：969 / 972