Optical Properties of Wide Band-Gap Semiconductor ZnMgSTe

被引：0

作者：

Shiomi, Shoma ^{[1
]}

Arima, Kei ^{[1
]}

Kawai, Miho ^{[1
]}

Ohno, Hiroto ^{[1
]}

Iwahashi, Kazuma ^{[1
]}

Akaiwa, Kazuaki ^{[2
]}

Abe, Tomoki ^{[2
]}

Ichino, Kunio ^{[2
]}

机构：

[1] Graduate School of Sustainability Science, Tottori Univ., Koyama-minami, Tottori

[2] Division of Engineering, Tottori Univ., Koyama-minami, Tottori

来源：

Zairyo/Journal of the Society of Materials Science, Japan | 2024年 / 73卷 / 10期

关键词：

Iso-electronic trap; MBE; Photoluminescence; ZnMgSTe;

D O I：

10.2472/jsms.73.774

中图分类号：

学科分类号：

摘要：

Optical properties of wide band-gap semiconductor ZnMgSTe have been investigated. ZnMgSTe thin film crystals were grown on GaAs substrates by molecular beam epitaxy. It was found that ZnMgSTe thin films exhibit relatively strong photoluminescence as compared to ZnSTe thin films. It was also found that the luminescence mechanism in ZnMgSTe is similar to that in ZnSTe and related to Te iso-electronic traps. The enhanced luminescence with Mg incorporation may be due to the fluctuation in microscopic composition of Zn and Mg. © 2024 Society of Materials Science Japan. All rights reserved.

引用

页码：774 / 777

页数：3

共 13 条

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