High-gain and low-power power amplifier for 24-GHz automotive radars

被引:0
作者
Pukyong National University, Dept. of Information and Communications Engineering, Korea, Republic of [1 ]
不详 [2 ]
不详 [3 ]
不详 [4 ]
不详 [5 ]
机构
[1] Pukyong National University, Dept. of Information and Communications Engineering
[2] Pukyong National University, Dept. of Statistics
[3] Department of Electronics Engineering, Konkuk University
来源
Int. J. Smart Home | / 2卷 / 27-34期
关键词
24-GHz; CMOS; RF power amplifier; Short range automotive radar;
D O I
10.14257/ijsh.2015.9.2.03
中图分类号
学科分类号
摘要
This paper presents a high gain and low power 24-GHz power amplifier (PA) for the short range automotive radar. The proposed circuit is implemented using TSMC 0.13-μm RF CMOS (fT/fmax=120/140 GHz) technology, and it is powered by a 1.5-V supply. To improve power gain of the amplifier, it has a 2-stage cascode scheme. This circuit uses transmission lines to reduce total chip size instead of real bulky inductors for input and output impedance matching. The layout techniques for RF (radio frequency) are used to reduce parasitic capacitances at the band of 24 GHz. The proposed RF amplifier has low cost and low power dissipation since it is realized using all CMOS processes. The proposed circuit showed the smallest chip size of 0.12 mm2, the lowest power dissipation of 44.3 mW and the highest power gain of 24.04 dB as compared to recently reported research results. © 2015 SERSC.
引用
收藏
页码:27 / 34
页数:7
相关论文
共 14 条
  • [11] Lin Y.S., Chang J.N., A 24-GHz power amplifier with Psat of 15.9 dBm and PAE of 14.6 % using standard 0.18 μm CMOS technology, Analog Integrated Circuits and Signal Processing, pp. 427-435, (2014)
  • [12] Kuo N.C., Kao J.C., Kuo C.C., Wang H., K-band CMOS power amplifier with adaptive bias for enhancement in back-off efficiency, IEEE MTT-S International Microwave Symposium, IEEE, (2011)
  • [13] Komijani A., Natarajan A., Hajimiri A., A 24-GHz, +14.5-dBm Fully Integrated Power Amplifier in 0.18-μm CMOS, IEEE Journal of Solid-State Circuits, IEEE, pp. 1901-1908, (2005)
  • [14] Shun T., Cheung D., A 21-26-GHz SiGe Bipolar Power Amplifier MMIC, IEEE Journal of Solid-State Circuits, IEEE, pp. 2583-2597, (2005)