Segmented DSVPWM strategy to depress IGBT junction temperature of wind-power converter

被引：0
作者：
Li H. [1 ]
Bai P. [1 ]
Li Y. [1 ]
Hu Y. [1 ]
Song E. [1 ]
Wang J. [2 ]
Ji H. [3 ]
机构：
[1] State Key Laboratory of Equipment and System Safety of Power Transmission and Distribution & New Technology, Chongqing University, Chongqing
[2] Chongqing KK-QIANWEI Wind Power Equipment Co., Ltd., Chongqing
[3] Key Laboratory of Signal and Information Processing, Chongqing Three Gorges University, Chongqing
来源：
| 2017年 / Electric Power Automation Equipment Press卷 / 37期
基金：
中国国家自然科学基金;
关键词：
Doubly-fed wind turbine-generator; DSVPWM; Electric converters; Insulated Gate Bipolar Transistors(IGBT); Junction temperature; Power-factor angle; Segmented modulation; Wind power;
D O I：
10.16081/j.issn.1006-6047.2017.02.006
中图分类号：
学科分类号：
摘要：
Aiming at the large IGBT(Insulated Gate Bipolar Transistor) junction temperature fluctuation of the rotor-side converter of doubly-fed wind turbine-generator, a modulation strategy is proposed to depress the IGBT junction temperature without affecting the operation performance of system. A power-factor angle expression of rotor-side converter is derived based on the concept that the DSVPWM(Discontinuous Space Vector Pulse Width Modulation) at a certain load power-factor angle can reduce the switching loss of converter and its variation range is analyzed. Since the variation range is quite large, a segmented DSVPWM strategy according to the power-factor angle variation range of rotor-side converter is proposed to depress its IGBT junction temperature. An electric-thermal coupling model considering the thermal performance of converter IGBT is established for a 2 MW doubly-fed turbine-generator system, and the electric-thermal performance of converter is simulated and analyzed for different power outputs, which show that, compared with the continuous space vector pulse width modulation, the proposed segmented DSVPWM strategy can effectively depress the IGBT junction temperature of the rotor-side converter and its fluctuation. © 2017, Electric Power Automation Equipment Press. All right reserved.
引用
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页码：37 / 43
页数：6
相关论文
共 20 条
  • [1] Che N.Z., Guerrero J.M., Blaabjerg F., A review of the state of the art of power electronics for wind turbines, IEEE Transactions on Power Electronics, 24, 8, pp. 1859-1875, (2009)
  • [2] Lei T., Barnes M., Smith A.C., Thermal cycling evaluation for DFIG wind turbine power converter based on joint modelling, IEEE Energy Conversion Congress and Exposition(ECCE), pp. 3845-3851, (2013)
  • [3] Bruns M., Rabelo B., Hofmann W., Investigation of doublyfed induction generator drives behaviour at synchronous operating point in wind turbines, European Conference on Power Electronics and Applications, pp. 1-10, (2009)
  • [4] Zhou D., Blaabjerg F., Lau M., Et al., Thermal behavior of doubly-fed induction generator wind turbine system during balanced grid fault, IEEE Applied Power Electronics Conference and Exposition(APEC), pp. 3076-3083, (2014)
  • [5] Li H., Qin X., Liu S., Et al., Assessment of power cycling capability for converter IGBT module of DFIG system, Electric Power Automation Equipment, 35, 1, pp. 6-12, (2015)
  • [6] Li H., Ji H., Qin X., Et al., A hybrid LVRT controlscheme for PMSG wind power system, Electric Power Automation Equipment, 35, 5, pp. 1-8, (2015)
  • [7] Morroni J., Dolgov A., Shirazi M., Et al., Online health monitoring in digitally controlled power converters, IEEE Power Electronics Specialists Conference, pp. 112-118, (2007)
  • [8] Forsyth A., Yang S., Mawby P., Et al., Measurement and modelling of power electronic devices at cryogenic temperatures, IEE Proceedings-Circuits, Devices and Systems, 153, 5, pp. 407-415, (2006)
  • [9] Xiang D., Ran L., Tavner P., Et al., Monitoring solder fatigue in a power module using case-above-ambient temperature rise, IEEE Transactions on Industry Applications, 47, 6, pp. 2578-2591, (2011)
  • [10] Lehmann J., Netzel M., Herzer R., Et al., Method for electrical detection of bond wire lift-off for power semiconductor, IEEE 15th International Symposium on Power Semiconductor Devices and ICs, pp. 333-336, (2003)
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