KKR-CPA study of electronic structure and relative stability of Mg2X (X = Si, Ge, Sn) thermoelectrics containing point defects

被引：0

作者：

Zwolenski, P. ^{[1
]}

Tobola, J. ^{[1
]}

Kaprzyk, S. ^{[1
]}

机构：

[1] AGH University of Science and Technology, Faculty of Physics and Applied Computer Science, Al. Mickiewicza 30, Krakow,30-059, Poland

来源：

Journal of Alloys and Compounds | 2015年 / 627卷

关键词：

Electronic structure;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Journal article (JA)

引用

页码：85 / 90

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