Buffer Layer Dependence of Defectivity in 200mm 4H-SiC Homoepitaxy

被引：0

作者：

Raciti, Domenica ^{[1
]}

Anzalone, Ruggero ^{[1
]}

Isacson, Mathias ^{[2
]}

Piluso, Nicolò ^{[1
]}

Severino, Andrea ^{[1
]}

机构：

[1] STMicroelectronics, Stradale Primosole 50, Catania,95100, Italy

[2] STMicroelectronics Silicon Carbide AB, Ramshällsvägen 15, Norrköping,SE-602 38, Sweden

来源：

Defect and Diffusion Forum | 2024年 / 434卷

关键词：

Silicon compounds;

D O I：

10.4028/p-KnJ9cE

中图分类号：

学科分类号：

摘要：

The effect of increasing Buffer Layer (BL) thickness on crystal defectivity has been investigated in 4° off-axis 4H-SiC homoepitaxy on 200mm substrates coming from different suppliers. The results, based on optical microscopy and scatter light methods, show a slight increase in morphological defects in the case of a thicker BL with respect to the standard thickness for both suppliers. © 2024 The Author(s).

引用

页码：117 / 121

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