Buffer Layer Dependence of Defectivity in 200mm 4H-SiC Homoepitaxy

被引：0
|
作者：
Raciti, Domenica [1 ]
Anzalone, Ruggero [1 ]
Isacson, Mathias [2 ]
Piluso, Nicolò [1 ]
Severino, Andrea [1 ]
机构：
[1] STMicroelectronics, Stradale Primosole 50, Catania,95100, Italy
[2] STMicroelectronics Silicon Carbide AB, Ramshällsvägen 15, Norrköping,SE-602 38, Sweden
来源：
Defect and Diffusion Forum | 2024年 / 434卷
关键词：
Silicon compounds;
D O I：
10.4028/p-KnJ9cE
中图分类号：
学科分类号：
摘要：
The effect of increasing Buffer Layer (BL) thickness on crystal defectivity has been investigated in 4° off-axis 4H-SiC homoepitaxy on 200mm substrates coming from different suppliers. The results, based on optical microscopy and scatter light methods, show a slight increase in morphological defects in the case of a thicker BL with respect to the standard thickness for both suppliers. © 2024 The Author(s).
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页码：117 / 121
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