Injected carrier concentration dependence of the expansion of single Shockley-type stacking faults in 4H-SiC PiN diodes

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[1] [1,Tawara, T.
[2] 1,Matsunaga, S.
[3] Fujimoto, T.
[4] Ryo, M.
[5] 1,Miyazato, M.
[6] Miyazawa, T.
[7] 1,Takenaka, K.
[8] 1,Miyajima, M.
[9] Otsuki, A.
[10] Yonezawa, Y.
[11] Kato, T.
[12] Okumura, H.
[13] Kimoto, T.
[14] Tsuchida, H.
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| 1600年 / American Institute of Physics Inc.卷 / 123期
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