High internal quantum efficiency blue light-emitting diodes with triangular shaped InGaN/GaN multiple quantum wells

被引：0

作者：

机构：

[1] Institute of Optoelectronic Materials and Technology, South China Normal University

来源：

Fan, G.-H. (gfan@scnu.edu.cn) | 2013年 / Editorial Office of Chinese Optics卷 / 34期

关键词：

Light-emitting diodes; Numerical simulation; Triangular shaped quantum well;

D O I：

10.3788/fgxb20133401.0072

中图分类号：

学科分类号：

摘要：

The internal quantum efficiency (IQE) of InGaN quantum wells (QWs) light-emitting diodes (LEDs) is numerically investigated, which involved its emission spectra, carrier concentrations, energy band, electrostatic field and internal quantum efficiency. Optical properties of InGaN/GaN LEDs with varied QW numbers are numerically studied. The results reveal that, for the LEDs with conventional rectangular shaped QWs, two quantum wells (2-QWs) units structure has better optical performance than 5-QWs and 7-QWs structures. The advantages of nitride-based LEDs with triangular shaped InGaN/GaN multiple quantum wells (MQWs) are also discussed. The simulation results indicate that the triangular shaped MQW LEDs exhibit a higher electrical luminescence (EL) intensity, higher IQE and a stronger light-output power than the conventional rectangular MQW LEDs. All the advantages are due to the higher carrier injection efficiency and recombination rate which are caused by the higher electron-hole wave function overlap, and small quantum confined stark effect (QCSE).

引用

页码：66 / 72

页数：6

共 28 条

[1]

Strite S., Morkoc H., GaN, AlN, and InN: A review, J. Vac. Sci. Technol. B, 10, 4, pp. 1237-1267, (1992)

[2]

Pearton S.J., Zolper J.C., Shul R.J., Et al., GaN: Processing, defects, and devices, J. Appl. Phys., 86, 1, pp. 1-78, (1999)

[3]

Jain S.C., Willander M., Narayan J., Et al., III-nitrides: Growth, characterization, and properties, J. Appl. Phys., 87, 3, pp. 965-1007, (2000)

[4]

Chen G.C., Fan G.H., Study on long-wavelength optical phonons in hexagonal InAlGaN crystals, Chin. J. Lumin., 33, 8, pp. 808-811, (2012)

[5]

He T., Chen Y., Li H., Et al., Optimization of two-step AlN buffer of a-plane GaN films grown on r-plane sapphire by MOCVD, Chin. J. Lumin., 32, 4, pp. 363-367, (2011)

[6]

Xing B., Cao W.Y., Du W.M., Temperature dependent PL of InGaN/ GaN multiple quantum wells with variable content of In, Chin. J. Lumin., 31, 6, pp. 864-869, (2010)

[7]

Li Y.L., Huang Y.R., Lai Y.H., Efficiency droop behaviors of InGaN/GaN multiple-quantum-well light-emitting diodes with varying quantum well thickness, Appl. Phys. Lett., 91, 18, (2007)

[8]

Ki M.H.M., Schubert M.F., Dai Q., Et al., Origins of efficiency droop in GaN-based light-emitting diodes, Appl. Phys. Lett., 91, 13, (2007)

[9]

Schubert M.F., Xu J., Kim J.K., Et al., Polarization-matched GaInN/AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop, Appl. Phys. Lett., 93, 4, (2008)

[10]

Rozhansky I.V., Zakhei D.A.M., Analysis of dependence of electroluminescence efficiency of AlInGaN LED heterostructures on pumping, Phys. Status Solidi C, 3, 6, pp. 2160-2164, (2006)

← 1 2 3 →