Comparison of electrical, optical, and structural properties of RF-sputtered ZnO thin films deposited under different gas ambients

被引：0
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作者：
Das, Rajesh [1 ,2 ]
Adhikary, Koel [1 ]
Ray, Swati [1 ]
机构：
[1] Energy Research Unit, Indian Association for the Cultivation of Science, Kolkata-700 032, India
[2] Energy CAT, Rensselaer Polytechnic Institute, Troy, NY 12180, United States
来源：
Japanese Journal of Applied Physics | 2008年 / 47卷 / 3 PART 1期
关键词：
Transparent conducting ZnO:Al thin films were prepared by rf-magnetron sputtering under different gas ambients at 300C. The electrical resistivity varied from 1.23 × 10-1 to 2.8 × 10-4 Ωcm introducing O2 and H2 gas with Ar ambient. The minimum sheet resistance of ZnO:Al film is 3.5 Ω/square. The maximum carrier concentration and Hall mobility as estimated from Hall effect measurement of the films were 2.3 × 1021/cm3 and 44.4cm2 V-1 s-1 respectively. Photoluminescence (PL) spectra peaks are mainly in the blue emission region and change from 432 nm (2.87eV) and 541.5nm (2.29 eV) with the change of gas ambients. From the X-ray diffraction (XRD) pattern exhibiting only the 〈002 peak of ZnO; all films were found to be c-axis-oriented. The crystallite size varies from 150 to 288 A for different films calculated from (002) orientation of XRD data. The characteristic features of ZnO films prepared under Ar + H2 ambient are their high carrier concentration; high strain values; high band gap and blue emission compared to the other ZnO films. The structural; electrical; optical properties and surface topography of ZnO thin films using XRD; Hall measurements; PL; UV-visible (vis)-near IR (NIR) spectroscopy and atomic force microscopy (AFM) have been investigated. © 2008 The Japan Society of Applied Physics;
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页码：1501 / 1506
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