Metalorganic chemical vapor deposition of conductive CaRuO3 thin films

被引：0

作者：

Higashi, Noriyuki ^{[1
]}

Okuda, Norikazu ^{[1
]}

Funakubo, Hiroshi ^{[1
]}

机构：

[1] Dept. of Innov. and Engineered Mat., Interdisc. Grad. Sch. Sci. and Eng., Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8502, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2000年 / 39卷 / 5 A期

关键词：

Calcium compounds - Crystal lattices - Crystal orientation - Dielectric films - Electric conductivity of solids - Electrodes - Epitaxial growth - Ferroelectric devices - Metallorganic chemical vapor deposition - Perovskite - Random access storage - Thin film devices;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

CaRuO3 thin films expected for use as an electrode of ferroelectric random-access memory were prepared for the first time by metalorganic chemical vapor deposition (MOCVD) from the bis(dipivaloylmethanato)calcium(tetraen) [Ca(C11H29O2)2(C8H23N5)x ]- tris(dipivaloylmethanato)ruthenium [Ru(C11H29O2)3]-O2 and the bis(dipivaloylmethanato)calcium(tetraen) [Ca(C11H29O2)2(C8H23N5)x ]-bis(ethylcyclipentadienyl)ruthenium Ru[(C5H4)(C2H5)]2-O2 systems. Epitaxial films were obtained on (100)LaAlO3 and (100)SrTiO3 substrates at 750 °C, while randomly oriented films were obtained on a (100)MgO substrate. The resistivity of these films was about 200 μΩ&middotcm, and was confirmed to be independent of film thickness ranging from 70 to 300 nm. This value is lower than that of SrRuO3 thin films, about 280 μΩ&middotcm.

引用

页码：2780 / 2783