Formation of flat monolayer-step-free (110) GaAs surfaces by growth interruption annealing during cleaved-edge epitaxial overgrowth

被引：0

作者：

Yoshita, Masahiro ^{[1
]}

Akiyama, Hidefumi ^{[1
]}

Pfeiffer, Loren N. ^{[2
]}

West, Ken W. ^{[2
]}

机构：

[1] Institute for Solid State Physics, University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581, Japan

[2] Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974, United States

来源：

| 1600年 / Japan Society of Applied Physics卷 / 40期

关键词：

Annealing - Atomic force microscopy - Epitaxial growth - Molecular beam epitaxy - Monolayers - Pressure effects - Vacuum applications;

D O I：

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摘要：

We have characterized, by means of atomic force microscopy, the as-grown and subsequently in situ annealed surfaces of 5 nm GaAs layers grown by molecular beam epitaxy (MBE) on a vacuum-cleaved (110) GaAs surface, and find that a high temperature growth interruption and anneal remarkably improves the surface morphology of the (110) GaAs layer. Interruption of the 490°C epitaxial GaAs growth by a 10 minute anneal at 600°C under an As4 overpressure produces an atomically-flat surface free of monolayer step edges over areas measuring several tens of μm on a side. These results suggest that the (110) GaAs surface has much higher stability tinder annealing conditions than under MBE growth conditions.

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