Crystal structure of oxygen/nitrogen-doped GeSbTe phase-change media: Investigation using grazing incidence X-ray diffraction

被引:0
作者
Takase, Aya [1 ,2 ,3 ,4 ]
Fujinawa, Go [1 ,2 ,3 ]
Ebina, Atsushi [1 ,2 ,3 ]
Hirasaka, Masao [1 ,2 ,3 ]
Sugiyama, Ikuto [1 ,2 ,3 ]
机构
[1] Application Laboratory, Rigaku Corporation, 3-9-12 Matsubara-cho, Akishima, Tokyo 196-8666, Japan
[2] Technical and Development Section, Recording Media Mihara Factory, Teijin Limited, 1-1-1 Enichi-cho, Mihara, Hiroshima 723-8611, Japan
[3] Polymer Research Center, Teijin Limited, 2-1-1 Uchisaiwai-cho, Chiyoda-ku, Tokyo 100-8585, Japan
[4] Recording Media Division, Teijin Limited, 2-1-1 Uchisaiwai-cho, Chiyoda-ku, Tokyo 100-8585, Japan
来源
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2002年 / 41卷 / 04期
关键词
Composition effects - Crystal structure - Doping (additives) - Lattice constants - Nitrogen - Oxygen - Phase transitions - Strain - Thin films - X ray diffraction analysis;
D O I
10.1143/jjap.41.2189
中图分类号
学科分类号
摘要
The effects of oxygen- and nitrogen-dopings on the crystal structure of GeSbTe recording layers of phase-change media were studied by X-ray diffraction. A high resolution grazing incidence X-ray diffraction optics using a laboratory X-ray source was developed to quantitatively analyze the crystal structure of thin film materials. Lattice parameter, crystallite size, and lattice strain were determined from diffraction profiles.
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页码:2189 / 2190
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