Preparation of Gallium Oxide Microcrystalline Thin Films and Its Solar Blind DUV Photodetector

被引：0

作者：

Lai L. ^{[1
]}

Mo H.-L. ^{[1
]}

Fu S.-J. ^{[1
]}

Mao Y.-Q. ^{[1
]}

Wang J.-H. ^{[1
]}

Fan S.-Q. ^{[1
]}

机构：

[1] Chongqing Key Laboratory of Photo-electric Functional Materials, College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing

来源：

Faguang Xuebao/Chinese Journal of Luminescence | 2020年 / 41卷 / 09期

基金：

中国国家自然科学基金;

关键词：

Gallium oxide; Microcrystalline; Olar blind UV photodetector; Photoelectric performance;

D O I：

10.37188/fgxb20204109.1165

中图分类号：

学科分类号：

摘要：

Microcrystalline Ga2O3 thin films were prepared on quartz substrates by radio frequency magnetron sputtering technology and thermal annealing technology. Using X-ray diffractometer(XRD), Raman spectroscopy, ultraviolet-visible-infrared spectrophotometer(UV-Vis-IR) and X-ray photoelectron spectrometer(XPS), the structure, optical properties and the chemical components were systematically studied. The results show that the prepared Ga2O3 film is amorphous. After the post-annealing process, all the films are changed from amorphous to microcrystalline films containing β-phase Ga2O3. With the rising of annealing temperature, the microcrystalline composition inside the film continues to increase. However, not all the thin films prepared on the quartz substrate were converted into fully crystalline thin films(β-Ga2O3). Based on amorphous and microcrystalline Ga2O3 thin films, metal-semiconductor-metal(MSM) structured solar blind deep ultraviolet photodetectors were fabricated. It was found that amorphous Ga2O3 thin film-based device shows higher optical response, while microcrystalline Ga2O3 thin film-based device shows lower dark current and faster response speed. © 2020, Science Press. All right reserved.

引用

页码：1165 / 1171

页数：6

共 41 条

[1]

XU M S, GE L, HAN M M, Et al., Recent advances in Ga-based solar-blind photodetectors [J], Chin. Phys. B, 28, 2, (2019)

[2]

XU J J, ZHENG W, HUANG F., Gallium oxide solar-blind ultraviolet photodetectors:a review [J], J. Mater. Chem. C, 7, 29, pp. 8753-8770, (2019)

[3]

CHEN X H, REN F F, GU S L, Et al., Review of gallium-oxide-based solar-blind ultraviolet photodetectors [J], Photonics Res, 7, 4, pp. 381-415, (2019)

[4]

SASAKI K, HIGASHIWAKI M, KURAMATA A, Et al., Si-ion implantation doping in β-Ga2O3 and its application to fabrication of low-resistance ohmic contacts [J], Appl. Phys. Express, 6, 8, (2013)

[5]

TIPPINS H H., Optical absorption and photoconductivity in the band edge of β-Ga2O3 [J], Phys. Rev, 140, 1A, pp. A316-A319, (1965)

[6]

HIGASHIWAKI M, SASAKI K, KURAMATA A, Et al., Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates [J], Appl. Phys. Lett, 100, 1, (2012)

[7]

RAFIQUE S, KARIM M R, JOHNSON J M, Et al., LPCVD homoepitaxy of Si doped β-Ga2O3 thin films on (010) and (001) substrates [J], Appl. Phys. Lett, 112, 5, (2018)

[8]

BALDINI M, ALBRECHT M, FIEDLER A, Et al., Semiconducting Sn-doped β-Ga2O3 homoepitaxial layers grown by metal organic vapour-phase epitaxy [J], J. Mater. Sci, 51, 7, pp. 3650-3656, (2016)

[9]

ZHANG Y F, CHEN X H, XU Y, Et al., Transition of photoconductive and photovoltaic operation modes in amorphous Ga2O3-based solar-blind detectors tuned by oxygen vacancies [J], Chin. Phys. B, 28, 2, (2019)

[10]

CUI S J, MEI Z X, ZHANG Y H, Et al., Room-temperature fabricated amorphous Ga2O3 high-response-speed solar-blind photodetector on rigid and flexible substrates [J], Adv. Opt. Mater, 5, 19, (2017)

← 1 2 3 4 5 →