Low-threshold-voltage HfOxN p-channel metal-oxide-semiconductor field-effect transistors with partially suicided platinum gate electrode

被引：0

作者：

Kadoshima, Masaru ^{[1
]}

Nabatame, Toshihide ^{[1
]}

Iwamoto, Kunihiko ^{[1
]}

Mise, Nobuyuki ^{[1
]}

Ota, Hiroyuki ^{[2
]}

Ogawa, Arito ^{[1
]}

Takahashi, Masashi ^{[1
]}

Ikeda, Minoru ^{[1
]}

Satake, Hideki ^{[1
]}

Toriumi, Akira ^{[2
,3
]}

机构：

[1] MIRAI, Association of Super-Advanced Electronics Technologies (ASET), Tsukuba, Ibaraki 305-8569, Japan

[2] MIRAI, Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-0046, Japan

[3] School of Engineering, University of Tokyo, Bunkyo-ku, Tokyo 113-8656, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2006年 / 45卷 / 8 A期

关键词：

HfOxN p-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) with a low threshold voltage (|Vth|) were successfully fabricated using a partially silicided (PASI) platinum gate electrode for scaled complementary MOS (CMOS). The PASI platinum (PASI-PtSi) gate electrode is composed of a monoclinic-Pt3Si phase in the vicinity of a HfOxN dielectric. The reduced silicon content of the PASI gate electrodes is effective in suppressing the Fermi-level pinning on the Hf-based gate dielectrics which induces a significant |Vth| shift in p-channel MOSFETs. It is shown that the |Vth| of HfOxN p-channel MOSFETs with the PASI-PtSi gate electrode is sufficiently low and applicable to low-standby-power devices. The mobility of the holes at 0.8MV/cm is as high as about 90% of the universal mobility. It is concluded that the PASI technology in which the gate electrode has a reduced silicon content is useful for scaled CMOSs. © 2006 The Japan Society of Applied Physics;

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摘要：

Journal article (JA)

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页码：6225 / 6230