Temperature dependent performance of GaN Schottky diode rectifiers

被引：0

作者：

Cao, X.A. ^{[1
]}

Dang, G.T. ^{[2
]}

Zhang, A.P. ^{[2
]}

Ren, F. ^{[2
]}

Pearton, S.J. ^{[1
]}

Lee, C.-M. ^{[3
]}

Chuo, C.-C. ^{[3
]}

Chyi, J.-I. ^{[3
]}

Chi, G.C. ^{[4
]}

Han, J. ^{[5
]}

Chu, S.N.G. ^{[6
]}

Wilson, R.G. ^{[6
]}

机构：

[1] Dept. of Mat. Sci. and Engineering, University of Florida, Gainesville, FL 32611, United States

[2] Department of Chemical Engineering, University of Florida, Gainesville, FL 32611, United States

[3] Department of Mechanical Engineering, National Central University, Chung-Li, Taiwan

[4] Department of Physics, National Central University, Chung-Li, Taiwan

[5] Sandia National Laboratory, Albuquerque, NM 87185, United States

[6] Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974, United States

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