Abbildung der mechanischen Eigenschaften von Nanodraht-Arrays

被引:0
作者
Ma T. [1 ]
Fahrbach M. [1 ]
Xu J. [1 ]
Anang F.E.B. [1 ]
Vergin M. [1 ]
Meierhofer F. [1 ]
Brand U. [2 ]
Waag A. [1 ]
Peiner E. [1 ]
机构
[1] Institute of Semiconductor Technology (IHT), 26527 Technische Universität Braunschweig, Braunschweig
[2] Physikalisch-Technische Bundesanstalt (PTB), Braunschweig
来源
Technisches Messen | 2024年 / 91卷 / 05期
关键词
3D contact resonance imaging (CRI); indentation modulus of NWs (M [!sub]i; NW; !/sub]); nanowire arrays (NWAs);
D O I
10.1515/teme-2023-0159
中图分类号
学科分类号
摘要
Dimensional and contact resonance (CR) images of nanowire (NW) arrays (NWAs) are measured using our newly developed microprobe CR imaging (CRI) setup. Then a reference method is employed to calculate the indentation modulus of NWs (M i,NW ) representing the elasticity of NWs, by measuring NWAs and reference samples at the same static probing force. Furthermore, topography is imaged in combination with CR and M i,NW separately by software, in which the z values indicate the topography of the NWs and the color bars show its CR or M i,NW . Then NWs' topography relation to M i,NW is visualized. As typical examples, 3D imaging of topography and measurement of M i,NW is performed with Si<111> pillar arrays as well as Cu and ZnO NWAs. The novel method enables fast mechanical performance measurements of large-scale vertically-aligned NWAs without releasing them from their respective substrates. For instance, the diameter and pitch of the Si<111> pillars and the diameter of the Cu NWAs are in good agreement with the values measured by scanning electron microscopy (SEM). The position of ZnO NWs bunches grown at arbitrary sites on silicon can be identified with the help of combined topography and indentation modulus images. Furthermore, M i,NW measured by our homemade CRI setup agrees well with bulk values. Differences between the measured M i,NW and bulk M i values may be related to a size effect in NW elasticity. © 2024 Walter de Gruyter GmbH, Berlin/Boston.
引用
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页码:268 / 279
页数:11
相关论文
共 37 条
  • [1] Raman S., Advances in silicon nanowire applications in energy generation, storage, sensing, and electronics: A review, Nanotechnology, 34, 18, (2023)
  • [2] Mokkapati S., Jagadish C., Nanowires for Energy Applications, 98, (2018)
  • [3] Murphy C.J., Jana N.R., Controlling the aspect ratio of inorganic nanorods and nanowires, Adv. Mater., 14, 1, pp. 80-82, (2002)
  • [4] Kim J., Cui J., Fichthorn K.A., Solution-phase growth of Cu nanowires with aspect ratios greater than 1000: Multiscale theory, ACS Nano, 15, 11, pp. 18279-18288, (2021)
  • [5] Sofiah A.G.N., Samykano M., Kadirgama K., Mohan R., Lah N., Metallic nanowires: Mechanical properties - Theory and experiment, Appl. Mater. Today, 11, pp. 320-337, (2018)
  • [6] Wlazlo M., Piezoelectric response and substrate effect of ZnO nanowires for mechanical energy harvesting in internet-of-things applications, Materials, 15, 19, (2022)
  • [7] Nugroho A.P., Vertically aligned n-type silicon nanowire array as a free-standing anode for lithium-ion batteries, Nanomaterials, 11, 11, (2021)
  • [8] Fahrbach M., Contact Resonance Imaging with Vertical Nanowire Arrays, (2022)
  • [9] Wang S., Shan Z., Huang H., The mechanical properties of nanowires, Adv Sci., 4, 4, (2017)
  • [10] Fatahilah M.F., Traceable nanomechanical metrology of GaN micropillar array, Adv. Eng. Mater., 20, 10, (2018)