Analysis of 4H-SiC Schottky barrier diode with a comb-shaped field plate

被引：0

作者：

Bae D. ^{[1
]}

Jeong C. ^{[1
]}

Kim T. ^{[1
]}

Kim K. ^{[1
]}

机构：

[1] Department of Electronic Engineering, Sogang University, Seoul

来源：

International Journal of Power Electronics | 2019年 / 10卷 / 04期

关键词：

4H-SiC; Breakdown voltage; Edge termination; Electric field crowding; Electric field distribution; Field plate; FP; Impact ionisation; Power device; Trench oxide; Wide band gap;

D O I：

10.1504/ijpelec.2019.10020485

中图分类号：

学科分类号：

摘要：

In this study, we have proposed a comb-shaped field plate for use in a 4H-SiC Schottky barrier diode; this field plate was expected to improve the electric field distribution in the device and provide a higher breakdown voltage than conventional field plate structures. The main principle of the proposed structure is to distribute the inner electric field in the blocking mode through a stepped oxide structure formed by several trenches. The proposed structure was optimised using a simulation, and we fabricated and measured a number of devices to evaluate the performance of the proposed structure. The proposed device’s breakdown voltage was 39% better than that of a SiC Schottky barrier diode containing conventional field plates. Copyright © 2019 Inderscience Enterprises Ltd.

引用

页码：427 / 438

页数：11

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