3 kV normally-off 4H-SiC buried gate static induction transistors (SiC-BGSITs)

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20141217488200

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(1) National Institute of Advanced Industrial Science and Technology, Japan; (2) Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi, Japan | 1600年 / Cree Inc.; et al; Mitsubishi Electric Corporation; Research Institute for Applied Sciences; The Japan Society of Applied Physics; Tokyo Electron Limited卷 / Trans Tech Publications Ltd期

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103223

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页码：778 / 780