Characterizations of thin tungsten films deposited on polyimide, Si(111) and SiO2 by direct-current magnetron sputtering

被引：0

作者：

Zhang R. ^{[1
]}

Liu Y. ^{[2
]}

Wang Y. ^{[1
]}

Huo Z. ^{[1
]}

Du B. ^{[3
]}

Zhong H. ^{[1
]}

Shi Y. ^{[1
]}

机构：

[1] State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu

[2] Civil Aviation Flight University of China, Guang Han

[3] 26th Institute of China Electronics Technology Group Corporation, Nan An District, Chongqing

来源：

Shi, Yu | 1600年 / American Scientific Publishers卷 / 13期

基金：

中国国家自然科学基金;

关键词：

Flexible; Microstructure; Sputtering; Substrates; Thin tungsten films;

D O I：

10.1166/jctn.2016.5467

中图分类号：

学科分类号：

摘要：

Thin tungsten films have been widely used in silicon-based electronics and flexible electronics. They are usually deposited either on rigid or flexible substrates. The structure of tungsten films directly influences the performance of tungsten-based devices, whereas the characteristics of tungsten films are inversely influenced by substrate materials. In this study, effects of commonly used rigid substrates of Si(111), SiO2 and flexible substrates of polyimide on properties of tungsten films deposited by direct-current magnetron sputtering were investigated. It was found that tungsten films on the three substrates all exhibited mixed phases. On SiO2 and polyimide substrates the α-tungsten with (110) texture was enhanced. Growth of tungsten grains was also facilitated on SiO2 and on polyimide substrates. Tungsten films on SiO2 had the roughest surface. While tungsten films sputtered on Si(111) exhibited flat surface with the smallest surface roughness. Column-like microstructure of tungsten films were presented on polyimide substrates with relatively low electrical resistivity and deposition rate. Tungsten films sputtered on Si(111) demonstrated porous microstructure showing the highest deposition rate and electrical resistivity. While tungsten films deposited on SiO2 had dense and tightly compact microstructure with lowest electrical resistivity and deposition rate. Based on this study, tungsten films deposited on polyimide substrates demonstrate competitive qualities comparing with which deposited on SiO2 and Si(111). To take advantage of flexibility the commonly used rigid substrates of Si(111) and SiO2 can be replaced by flexible polyimide substrates in designing and fabricating tungsten-based devices. Copyright © 2016 American Scientific Publishers All rights reserved.

引用

页码：5660 / 5663

页数：3

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