Low threshold current density operation of GaInAsP/InP lasers with strain-compensated multiple-layered wirelike active regions

被引：0

作者：

Nunoya, Nobuhiro ^{[1
]}

Yasumoto, Hideo ^{[1
]}

Midorikawa, Hideki ^{[1
]}

Tamura, Shigeo ^{[1
]}

Arai, Shigehisa ^{[1
]}

机构：

[1] Res. Ctr. Quant. Effect Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan

来源：

Japanese journal of applied physics | 2000年 / 39卷 / 10 B期

关键词：

Current density - Electron beam lithography - Metallorganic vapor phase epitaxy - Multilayers - Reactive ion etching - Semiconducting films - Semiconducting gallium compounds - Semiconducting indium phosphide - Semiconductor growth - Semiconductor quantum wires - Strain;

D O I：

10.1143/jjap.39.l1042

中图分类号：

学科分类号：

摘要：

In order to suppress the occurrence of nonradiative recombination traps during an etching and regrowth process, whose origin was considered to be large latticemismatch, a partially strain-compensated five-quantum-well structure was used for 1.5 μm GaInAsP/InP lasers with wirelike active regions (wire widths of 43 nm and 70 nm) fabricated by electron beam lithography, CH4/H2 reactive-ion etching and organo-metallic vapor-phase-epitaxial regrowth. As a result, we realized wirelike lasers with wire widths of 43 nm with a threshold current lower than those of quantum film lasers prepared on the same wafer at temperature up to 85°C, for the first time.

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