Discovery of new PVD chalcogenide materials for memory applications

A case study is presented based on the use of high throughput experimentation (HTE) for the discovery of new memory materials. The case study involves using of HTE for the discovery of new memory materials. By using a combinatorial approach of sputtering technology, HTE can be applied to PVD chalcogenides and other materials targeted at memory semiconductors. The combinatorial approach can be defined as a process that couples the capability for parallel production of large arrays of diverse materials together with different high-throughput measurement techniques for various intrinsic and performance properties supported by data analytics for identifying lead materials.