Luminescence mechanisms of zinc oxide layers obtained by isovalent substitution

被引：0

作者：

Makhni, V.P. ^{[1
]}

Sletov, M.M. ^{[1
]}

Khusnutdinov, S.V. ^{[1
]}

机构：

[1] Yurǐ Fed'kovich Chernovtsy National University, Chernovtsy

来源：

Journal of Optical Technology (A Translation of Opticheskii Zhurnal) | 2009年 / 76卷 / 06期

关键词：

Compendex;

D O I：

10.1364/jot.76.000364

中图分类号：

学科分类号：

摘要：

This paper discusses the luminescence properties of zinc oxide layers obtained by thermally annealing single-crystal substrates of undoped zinc selenide in air. It is established that the photoluminescence spectrum at 300 K in the 1.6-3.2-ev region consists of red, green, yellow, and UV bands. The first three are caused by transitions via deep levels, while the UV band is caused by interband recombination accompanied by interaction of the carriers with LO phonons. © 2009 Optical Society of America.

引用

页码：364 / 366

页数：2

共 3 条

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West, C.
Robbins, D.J.
Dean, P.J.
Hayes, W.
Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics, 1982, 116 B&C (1-3): : 492 - 499
[2] FACTORS THAT INFLUENCE THE SENSITIZATION OF ZINC OXIDE IN ELECTROGRAPHIC LAYERS.
Hauffe, Karl
Tappi, 1974, 57 (02):
[3] GROWTH-KINETICS AND GROWTH MECHANISMS FOR DISILICIDE LAYERS OBTAINED THROUGH IMPLANTATION
DHEURLE, FM
PETERSSON, CS
TSAI, MY
JOURNAL OF APPLIED PHYSICS, 1982, 53 (12) : 8765 - 8770

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