Pulsed Laser Deposition of c-Axis Oriented BiCuSeO Epitaxial Film and Its Thermoelectric Properties

被引：0

作者：

Yuan D. ^{[1
,2
]}

Guo S. ^{[2
]}

Hao J. ^{[1
]}

Ma Y. ^{[1
]}

Wang S. ^{[2
]}

机构：

[1] College of Mechanical and Electrical Engineering, Agricultural University of Hebei, Baoding

[2] College of Physical Science and Technology, Hebei University, Baoding

来源：

Cailiao Daobao/Materials Review | 2019年 / 33卷 / 01期

基金：

中国国家自然科学基金;

关键词：

BiCuSeO epitaxial thin films; C-axis orientation; Pulsed laser deposition; Thermoelectric properties;

D O I：

10.11896/cldb.201901017

中图分类号：

学科分类号：

摘要：

BiCuSeO thin films were prepared on single crystal SrTiO3 substrates by pulsed laser deposition, and the impact of deposition temperature on the crystal structure, micromophology and thermoelectric transport properties of the films was investigated in detail. At the optimal deposition temperature of 330℃, pure phase and c-axis oriented BiCuSeO thin films could be obtained, showing a epitaxial relationships between the substrates and the films of [010]SrTiO3//[010]BiCuSeO and [001]SrTiO3//[100]BiCuSeO. It could be found from the results of electrical properties test that the film exhibited a metallic-like conducting behavior over range of 20-350 K, with the room temperature resistivity of only 12.5 mΩ•cm, which was much lower than that of the corresponding polycrystalline bulk materials. The calculated room temperature power factor (PF) of the films was about 3.3 μW•cm-1•K-2, which was higher than that of the corresponding polycrystalline bulk materials, indicating a great application prospect of c-axis oriented BiCuSeO epitaxial thin films in the field of thin-film thermoelectric devices. © 2019, Materials Review Magazine. All right reserved.

引用

页码：152 / 155

页数：3

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