Band structure and spontaneous emission spectrum of InGaAsSb/GaSb quantum well

被引：0

作者：

An, Ning ^{[1
]}

Li, Zhanguo ^{[1
]}

He, Bintai ^{[1
]}

Lu, Peng ^{[1
]}

Fang, Xuan ^{[1
]}

Wei, Zhipeng ^{[1
]}

Liu, Guojun ^{[1
]}

机构：

[1] National Key Laboratory of High-Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun

来源：

Qiangjiguang Yu Lizishu/High Power Laser and Particle Beams | 2014年 / 26卷 / 11期

关键词：

Band structure; InGaAsSb/GaSb; Spontaneous emission spectra; Strained quantum well;

D O I：

10.11884/HPLPB201426.111008

中图分类号：

学科分类号：

摘要：

This paper presents a theoretical study of influence of In content on the InGaAsSb/GaSb quantum well structure. The accurate relationship between the band gap and the In content is given. The band offset as functions of the In content is calculated numerically. The results show that as the In content increase, the band gap of InGaAsSb decreases accordingly, but the amount of stress enhances, the band edge shift gets larger, and the band offset of InGaAsSb/GaSb reduces. Meanwhile, The peak wavelength of spontaneous emission spectra exhibits redshift and the gain decreases with the increase of the In content. This proves that it is feasible to adjust and control the band gap by altering the In content, which is useful for tailoring the material property and the photonics device design. ©, 2014, Editorial Office of High Power Laser and Particle Beams. All right reserved.

引用

页数：6

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