A Novel On-line Method for Monitoring the Junction Temperature of SiC MOSFET Based on Threshold Voltage

被引：0

作者：

Zhang Q. ^{[1
]}

Zhang P. ^{[1
]}

机构：

[1] State Key Lab of Security Control and Simulation of Power Systems and Large Scale Generation Equipment, Tsinghua University, Haidian District, Beijing

来源：

Zhongguo Dianji Gongcheng Xuebao/Proceedings of the Chinese Society of Electrical Engineering | 2020年 / 40卷 / 18期

基金：

中国国家自然科学基金;

关键词：

Junction temperature; Metal-oxide-semiconductor field-effect transistor (MOSFET); Online monitoring; Reliability; Silicon carbide device;

D O I：

10.13334/j.0258-8013.pcsee.200609

中图分类号：

学科分类号：

摘要：

As the representative of wide band gap power devices, silicon carbide MOSFET has become the future development direction due to its application in small capacity high frequency converter. As a result, its reliability has gradually attracted attention. Among all the factors restricting reliability of SiC MOSFET, excessive junction temperature matters the most. However, the high switching frequency of SiC devices increases the difficulty and cost of dynamic parameter measurement. Compared with silicon devices, the sensitivity of steady-state parameters such as on-voltage drop and on-resistance to junction temperature is greatly reduced. Therefore, the mainstream thermistor parameter method (TSEP method) cannot effectively monitor the junction temperature online. Compared with other TESPs, the threshold voltage is more sensitive and relatively easier to measure. However, the accuracy of conventional method based on threshold voltage is disturbed by the switch oscillation, and the measurement circuit is complex. To solve these problems, this paper proposed a novel on-line method for monitoring the junction temperature of SiC MOSFET based on threshold voltage. Firstly, the relationship between junction temperature and threshold voltage was theoretically derived, which is proved highly linear. Then an algorithm of threshold voltage based on polynomial fitting was proposed and the matching measurement circuit was designed. Finally, the effectiveness of this method was proved by the on-line monitoring experiment based on an H-bridge single-phase inverter. This method has the following advantages: 1) it is less affected by the switch oscillation and improves the monitoring accuracy; 2) it greatly simplifies the measuring circuit and only needs a simple sampling circuit and a filter; 3) it has certain tolerance on the the change of sampling frequency. © 2020 Chin. Soc. for Elec. Eng.

引用

页码：5742 / 5750

页数：8

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