Influence of H2O and O3 on thermal atomic layer deposited Al2O3 film performance

被引：0

作者：

Li S. ^{[1
]}

Xu J. ^{[1
]}

Ye X. ^{[1
]}

Liu C. ^{[1
]}

Yuan X. ^{[1
]}

Li H. ^{[1
]}

机构：

[1] School of Materials Science and Engineering, East China University of Science and Technology, Shanghai

来源：

Taiyangneng Xuebao/Acta Energiae Solaris Sinica | 2021年 / 42卷 / 04期

关键词：

Aluminum oxide; Atomic layer deposition; Fixed negative charge; Interface states; Silicon solar cells; Surface passivation;

D O I：

10.19912/j.0254-0096.tynxb.2018-1240

中图分类号：

学科分类号：

摘要：

Al2O3 films were deposited by thermal atomic layer deposition with trimethylaluminum (TMA) as aluminum source and H2O, O3 and H2O+O3 as oxidants. The growth, elemental distributions, film structure and surface passivation quality of Al2O3 films are investigated as a function of the oxidant species and post-annealing process. It indicates that the H2O based Al2O3 films have a higher deposition rate and refractive index, together with the lower impurity elements concentration and interface defects density than the O3 based Al2O3 films. However, higher fixed charge density and improved thermal stability can be observed on the O3 based Al2O3 films. By adding H2O to the O3 process, the impurity elements concentration in Al2O3 films and the interface defects density can be effectively reduced, while the high negative fixed charge density of the O3 based Al2O3 films is still retained, which combines the advantages of both H2O and O3 based Al2O3 films in passivation performance. © 2021, Solar Energy Periodical Office Co., Ltd. All right reserved.

引用

页码：223 / 228

页数：5

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