Effect of different abrasives on chemical mechanical polishing for magnesia alumina spinel

被引:0
作者
Wang Z. [1 ]
Pang M. [1 ]
Su J. [1 ]
Yao J. [1 ,2 ]
机构
[1] School of Mechanical and Electrical Engineering, Henan Institute of Science and Technology, Xinxiang
[2] College of Mechanical and Electrical Engineering, Nanjing Univ. of Aeronautics and Astronautics, Nanjing
基金
中国国家自然科学基金;
关键词
Abrasive; Chemical mechanical polishing; Magnesium aluminate spinel; Materials removal rate; Surface quality;
D O I
10.4028/www.scientific.net/KEM.866.115
中图分类号
学科分类号
摘要
In this paper, a series of chemical mechanical polishing (CMP) experiments for magnesia alumina (Mg-Al) spinel were carried out with different abrasives, and the materials removal rate (MRR) and surface quality was evaluated to explore their different effects. The scanning electron microscope (SEM) and laser particle size analyzer were also employed to test the micro-shape and size distribution of abrasives. Then, the mechanism of different effects with different abrasives was analyzed in CMP for Mg-Al spinel. Those experimental results suggest that different subjecting pressure ratios of abrasives to polishing pad with different abrasive are the key factors leading to difference polishing performances in CMP. © 2020 Trans Tech Publications Ltd, Switzerland.
引用
收藏
页码:115 / 124
页数:9
相关论文
共 17 条
  • [1] Gentilman R L., Fusion-Casting of Transparent spinel for 7075 Al alloy SiC composite, Am. Ceram. Bull, 60, pp. 906-909, (1981)
  • [2] Polycrystalline MgAl2O4 spinel for use as windows and domes from 0.3 to 6.0 mierons, SPIE, 50, pp. 12-18, (1984)
  • [3] Wang C T, Lin L S., Preparation of MgA12O4 spinel powders via freeze-drying of alkoixde precursors, J.Am.ceram.Soe, 75, pp. 2240-2243, (1992)
  • [4] Walshr J, Herzog A H., Process for polishing semiconductor materials
  • [5] Dongming Guo, Renke Kang, Jianxiu Su, Future development on wafer planarization technology in ULSI fabrication, Chinese Journal of Mechanical Engineering, 39, pp. 100-105, (2003)
  • [6] Zhou Yan, Pan Guoshun, Shi Xiaolei, Effects of ultra-smooth surface atomic step morphology on chemical mechanical polishing(CMP) performances of sapphire and SiC wafers, Tribology international, 87, pp. 145-150, (2015)
  • [7] Zhu Honglin, Tessaroto Luiz A., Sabia Robert, Chemical mechanical polishing(CMP) anisotropy in sapphire, Applied Surface Science, 236, pp. 120-130, (2004)
  • [8] Zhang Zefang, Liu Weili, Song Zhitang, Effect of abrasive particle concentration on preliminary chemical mechanical polishing of glass substrate, Microelectronic Engineering, 87, pp. 2168-2172, (2010)
  • [9] Wei Kuohsiu, Wang Yusheng, Liu Chuanpu, The influence of abrasive particle size in copper chemical mechanical planarization, Surface & Coating Technology, 231, pp. 543-545, (2013)
  • [10] Estragnat E., Tang G., Liang H., Experimental investigation on mechanisms of silicon chemical mechanical polishing, Journal of Electronic Materials, 33, pp. 334-339, (2004)