Enhanced bulk photovoltaic effect in ZnO:Bi x (p-type)/MoS2 (n-type) heterostructure by tuning Bi content

被引：0
作者：
Zhou Y. [1 ]
Liu X. [1 ]
Zhu J. [1 ]
机构：
[1] State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu
来源：
Semiconductor Science and Technology | 2020年 / 35卷 / 01期
关键词：
doping-Bi; p-type ZnO; photovoltaic effect; ZnO/MoS[!sub]2[!/sub;
D O I：
10.1088/1361-6641/ab52f0
中图分类号：
学科分类号：
摘要：
To investigate the metal oxide thin film application in optoelectronic field via changing its conduction type, the p-n junction with Bi-doped p-type ZnO and n-type MoS2 is fabricated by pulsed laser deposition. In this work, we explore the photovoltaic effect of the ZnO/MoS2 heterostructure, focusing on the function of tuning Bi contents in enhancing the photoelectric conversion efficiency. Doping-Bi ZnO thin film perfectly shows stable p-type semiconductor properties with high carrier concentration (about from 1 × 1016 to 1 × 1017 cm-3), high rational mobility (363 cm-2 V-1 s-1) and low resistivity (216.7 Ω). In addition, MoS2 clearly exhibits large quantities of nanosheets and distinct vertically standing structure. The power conversion efficiency (PCE) of ZnO:Bi x /MoS2 enhances from 0.518% to 2.430% along with increasing doping Bi element from 1% to 7%, but when doping Bi content reaches 10%, the PCE decrease 0.552%. Essentially, the ability of capturing photon-generated carriers in ZnO:Bix film gradually increases as doping Bi content to without excessive doping content. These findings illustrate that this proposed Bi-doped ZnO has potential in promoting the photoelectric conversion efficiency of MoS2 based p-n junction. © 2019 IOP Publishing Ltd.
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